Name: IPD80R1K4P7 N Channel Mosfet Transistor TO-252
Brand: HK LIANYIXIN INDUSTRIAL CO., LIMITED
SKU: IPD80R1K4P7
Availability: InStock

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IPD80R1K4P7 N Channel Mosfet Transistor TO-252

IPD80R1K4P7 N Channel Mosfet Transistor

TO-252 N Channel Mosfet Transistor

IPD80R1K4P7 Integrated Circuit Ic Chip

Place of Origin:

original

Brand Name:

INFINEON

Model Number:

IPD80R1K4P7

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Product Details

Quality：:

Brand New Unused

Package / Box::

TO-252

Payment & Shipping Terms

Minimum Order Quantity

1pcs

Price

Negotiate

Packaging Details

4000

Delivery Time

Stock

8000+

Payment Terms

D/A, L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability

37830pcs

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kezhiwei@lianyixinic.com

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Product Description

ISO9001.pdf

Application:
IPD80R1K4P7 is an N-channel MOSFET transistor commonly used in high-efficiency DC-DC converters and power supply applications. It can operate at low voltage and has low resistance and high switching speed, making it very suitable for use in low voltage applications.
Conclusion:
IPD80R1K4P7 has the following characteristics:
Very low switching and conduction losses;
High voltage limit, capable of operating at high voltage;
High switching speed enables efficient DC-DC converters;
High temperature stability, capable of working in high temperature environments.
Parameters:
The key parameters of IPD80R1K4P7 are as follows:
Rated current: 80A;
Rated voltage: 40V;
Maximum drain power supply voltage: 55V;
Static resistance: 1.4m Ω;
Typical capacitance: 2000pF;
Working temperature range: -55 ° C~+175 ° C;
Packaging type: TO-252 (DPAK).

Product Technical Specifications

EU RoHS	Compliant with Exemption聽
ECCN (US)	EAR99
Part Status	Unconfirmed
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	CoolMOS P7
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	800
Maximum Gate Source Voltage (V)	20
Maximum Gate Threshold Voltage (V)	3.5
Maximum Continuous Drain Current (A)	4
Maximum Gate Source Leakage Current (nA)	1000
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	1400@10V
Typical Gate Charge @ Vgs (nC)	10@10V
Typical Gate Charge @ 10V (nC)	10
Typical Input Capacitance @ Vds (pF)	250@500V
Maximum Power Dissipation (mW)	32000
Typical Fall Time (ns)	20
Typical Rise Time (ns)	8
Typical Turn-Off Delay Time (ns)	40
Typical Turn-On Delay Time (ns)	10
Minimum Operating Temperature (掳C)	-55
Maximum Operating Temperature (掳C)	150
Packaging	Tape and Reel
Mounting	Surface Mount
Package Height	2.41(Max)
Package Width	6.22(Max)
Package Length	6.73(Max)
PCB changed	2
Tab	Tab
Supplier Package	DPAK
Pin Count	3

Tags：

IPD80R1K4P7 N Channel Mosfet Transistor TO-252

IPD80R1K4P7 N Channel Mosfet Transistor

TO-252 N Channel Mosfet Transistor

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